- (A) Collector, emitter and gate
- (B) Drain, source and gate
- (C) Drain, source and base
- (D) Collector, emitter and base
Electrical Engineering Mcqs
- (A) gate current rises from 90 % to 100 % of it final value
- (B) anode voltage drops from 90 % to 10 % of its initial value
- (C) anode current rises 10 % to 90 % of its final value
- (D) both B and C
- (A) IGBT
- (B) FCT
- (C) MCT
- (D) GTO
- (A) gate current increases from 90 % to 100 % of its final value
- (B) anode current reaches 10 % from forward leakage current
- (C) anode voltage drops from 100 % to 90 % of its actual value
- (D) all of these
- (A) IGBTs
- (B) COOLMOS
- (C) TRIAC
- (D) SITS
- (A) Reverse recovery time ( trr ) > gate recovery time (tgr)
- (B) Device turn OFF time ( tq ) > reverse recover time (trr)
- (C) Circuit turn OFF time > device turn OFF time ( tq )
- (D) All of these
- (A) SIT
- (B) BJT
- (C) TRIAC
- (D) IGBT
- (A) 3 – 10 µs
- (B) 3 – 50 µs
- (C) 3 – 100 µs
- (D) 3 – 500 µs
- (A) charge carriers of J2 junction recombined
- (B) charge carriers of J2 junction is swept out
- (C) charge carrier of J1 junction removed
- (D) charge carriers of J3 junction is removed
- (A) charge carrier of junction J2 recombined
- (B) charge carrier of junction J1 is swept out
- (C) charge carrier of junction J3 is swept out
- (D) both B and C
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