- (A) 60
- (B) 70
- (C) 80
- (D) 90
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- (A) 76.3 %
- (B) 91.6 %
- (C) 83.3 %
- (D) 90.9 %
- (A) anode current decreases
- (B) anode current does not decrease at all
- (C) anode current increases
- (D) cathode current increases
- (A) Always positive w.r.t cathode
- (B) Always negative w.r.t anode
- (C) Always positive w.r.t anode
- (D) Always negative w.r.t cathode
- (A) silicon has large leakage current than germanium
- (B) silicon has small leakage current than germanium
- (C) silicon has small leakage voltage than germanium
- (D) silicon has large leakage voltage than germanium
- (A) Across anode
- (B) In series with anode
- (C) Across cathode
- (D) In series with cathode
- (A) Two SCR’s in parallel opposition
- (B) Two SCR’s in series
- (C) Three SCR’s in series
- (D) Four SCR’s in series
- (A) Two
- (B) Three
- (C) Four
- (D) Five
- (A) Duty ratio only
- (B) Frequency only
- (C) Duty ratio and frequency
- (D) Duty ratio, frequency and time delay
- (A) Insulated gate bipolar transistor
- (B) Insulated gate bidirectional transistor
- (C) Inductive gate bipolar transistor
- (D) Inductive gate bidirectional transistor
