- (A) BJT
- (B) Power dioed
- (C) MOSFET
- (D) None of above
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- (A) 0 – 0.5 V.
- (B) 0.5 – 1 V.
- (C) 1 – 1.5 V.
- (D) 1.5 – 2 V.
- (A) Zero
- (B) Non zero
- (C) Equal to the sum of voltage when switch is open
- (D) Twice of the voltage when switch is open
- (A) It will rotate at the same speed as that with its field winding closed
- (B) It will rotate at less speed as that with its field winding closed
- (C) It will rotate at dangerously high speed
- (D) None of these
- (A) Indirect switch matrix circuits
- (B) Direct switch matrix circuits
- (C) Embedded converters
- (D) All of these
- (A) High speed operation
- (B) High rupturing capacity
- (C) No ageing effect
- (D) All of the above
- (A) Load survey method
- (B) Mathematical method
- (C) Statistical method
- (D) Economic parameters
- (A) 0.75
- (B) 0.7
- (C) 0.2
- (D) 0.25
- (A) AC – AC converters
- (B) AC – DC converters
- (C) DC – AC converters
- (D) DC – DC converters
- (A) equal division of voltage across each thyristor
- (B) equal division of current through each thyristor in parallel
- (C) equal division of voltage across each thyristor in parallel
- (D) equal division of current through each thyristor in series
